1 composite transistors XN1215 silicon npn epitaxial planer transistor for switching/digital circuits n features l two elements incorporated into one package. (emitter-coupled transistors with built-in resistor) l reduction of the mounting area and assembly cost by one half. n basic part number of element l un1215 2 elements n absolute maximum ratings (ta=25?c) 1 : collector (tr1) 4 : emitter 2 : collector (tr2) 5 : base (tr1) 3 : base (tr2) eiaj : scC74a mini type pakage (5Cpin) unit: mm marking symbol: 9m internal connection parameter symbol ratings unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 50 v collector current i c 100 ma total power dissipation p t 300 mw junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c rating of element overall 2.8 +0.2 - 0.3 1.5 0.65 0.15 0.65 0.15 1 5 4 3 2 1.45 0.1 0.95 0.95 1.9 0.1 0.8 +0.25 - 0.05 0.3 +0.1 - 0.05 0.16 0 to 0.1 +0.1 - 0.06 2.9 +0.2 - 0.05 1.1 +0.2 - 0.1 0.4 0.2 0.1 to 0.3 n electrical characteristics (ta=25?c) parameter symbol conditions min typ max unit collector to base voltage v cbo i c = 10 m a, i e = 0 50 v collector to emitter voltage v ceo i c = 2ma, i b = 0 50 v collector cutoff current i cbo v cb = 50v, i e = 0 0.1 m a i ceo v ce = 50v, i b = 0 0.5 m a emitter cutoff current i ebo v eb = 6v, i c = 0 0.01 ma forward current transfer ratio h fe v ce = 10v, i c = 5ma 160 460 forward current transfer h fe ratio h fe (small/large) *1 v ce = 10v, i c = 5ma 0.5 0.99 collector to emitter saturation voltage v ce(sat) i c = 10ma, i b = 0.3ma 0.25 v output voltage high level v oh v cc = 5v, v b = 0.5v, r l = 1k w 4.9 v output voltage low level v ol v cc = 5v, v b = 2.5v, r l = 1k w 0.2 v transition frequency f t v cb = 10v, i e = C2ma, f = 200mhz 150 mhz input resistance r 1 C30% 10 +30% k w *1 ratio between 2 elements 51 tr2 tr1 4 32
2 composite transistors p t ta i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o 0 100 200 300 400 500 0 40 80 120 160 ambient temperature ta ( ?c ) total power dissipation p t ( mw ) XN1215 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma i b =1.0ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c 25?c 0 13 100 200 300 400 350 250 150 50 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c 25?c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c
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